Imec Presents Large Area Crystalline Silicon n-PERT Solar Cell with Record 22.5 Percent Efficiency

Imec announced at Intersolar Europe a new efficiency record for its large area n-type PERT (passivated emitter, rear totally diffused) crystalline silicon (Cz-Si) solar cell, now reaching 22.5% (calibrated at ISE CalLab). It is the highest efficiency achieved for a two-side-contacted solar cell processed on six inch commercially available n-type Cz-Si wafers without the use of passivated contacts.

Aiming to increase the conversion efficiency of n-type silicon solar cells, imec is exploring material and architectural improvements to extend its n-PERT solar cell concept. The cells feature Ni/Cu/Ag front contacts, rear local contacts, a diffused front surface field (FSF) and a rear emitter.

Imec has also been exploring n-type PERT cells with a rear side p-type emitter using epitaxial growth or heterojunction processes. These advanced architectures have reached promising conversion efficiencies approaching 22%.

“We have a strong commitment to continue increasing the efficiency our n-PERT technology, and are very optimistic that these achievements will further pave the way to industrialization in the near term,” Filip Duerinckx, manager of imec’s n-PERT technology platform, said.